power mosfets 1 publication date: november 2004 sjg00039aed 2SK3193 silicon n-channel power mosfet for switching features ? avalanche energy capability guaranteed ? high-speed switching ? low on resistance r on ? no secondary breakdown absolute maximum ratings t c = 25 c unit: mm parameter symbol rating unit drain-source surrender voltage v dss 350 v gate-source surrender voltage v gss 30 v drain current i d 20 a peak drain current i dp 80 a avalanche energy capability * eas 200 mj power dissipation p d 100 w t a = 25 c3 channel temperature t ch 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit drain-source surrender voltage v dss i d = 1 ma, v gs = 0 350 v drain-source cutoff current i dss v ds = 280 v, v gs = 010 a gate-source cutoff current i gss v gs = 30 v, v ds = 0 1 a gate threshold voltage v th v ds = 10 v, i d = 1 ma 2 4 v drain-source on resistance r ds(on) v gs = 10 v, i d = 10 a 120 150 m ? forward transfer admittance ? y fs ? v ds = 10 v, i d = 10 a 6 12 s short-circuit forward transfer capacitance c iss v ds = 10 v, v gs = 0, f = 1 mhz 3 900 pf (common source) short-circuit output capacitance c oss 1 340 pf (common source) reverse transfer capacitance c rss 560 pf (common source) turn-on delay time t d(on) v dd = 150 v, i d = 10 a 40 ns rise time t r r l = 15 ?, v gs = 10 v 75 ns turn-off delay time t d(off) 340 ns fall time t f 95 ns electrical characteristics t c = 25 c 3 c 15.0 0.3 5.0 0.2 11.0 0.2 2.0 0.2 2.0 0.1 0.6 0.2 1.1 0.1 5.45 0.3 10.9 0.5 123 21.0 0.5 16.2 0.5 solder dip (2.3) (3.2) 15.0 0.2 (0.7) 3.2 0.1 (3.2) 1: gate 2: drain 3: source eiaj: sc-92 top-3f-b1 package note) * :l = 1 mh, i l = 20 a, 1 pulse, t a = 25 c internal connection g s d marking symbol: k3193
2SK3193 2 sjg00039aed safe operation area p d ? t a 11010 2 10 3 10 ? 1 1 10 10 2 10 3 non repetitive pulse t c = 25 c drain current i d ( a ) drain-source voltage v ds ( v ) i d i dp t = 100 s 10 ms 1 ms dc 100 ms 0 50 150 100 0 120 100 80 60 40 20 power dissipation p d ( w ) ambient temperature t a ( c ) (1) t c = t a (2) without heat sink p d = 3 w (1) (2) parameter symbol conditions min typ max unit diode forward voltage v dsf i dr = 20 a, v gs = 0 ? 1.4 v reverse recovery time t rr l = 230 h, v dd = 100 v 260 ns reverse recovery charge q rr i dr = 10 a, di/dt = 100 a/ s 1.8 c gate charge load q g v dd = 100 v, i d = 10 a 90 nc gate-source charge q gs v gs = 10 v 10 nc gate-drain charge q gd 30 nc thermal resistance (ch-c) r th(ch-c) 1.25 c/w thermal resistance (ch-a) r th(ch-a) 41.7 c/w electrical characteristics (continued) t c = 25 c 3 c note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep
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